Electronics-I

Instruction: 3 Periods & 1 Tut /week

Univ. Exam : 3 Hours

Sessional Marks: 30

Univ-Exam-Marks:70

I. Semiconductors :

Electronic Emission from metal carrier concentration in an intrinsic Semiconductors open circuited PN junction – diffusion.

II. PN Junction Diode :

PN Junction Diode, VI Characteristics of PN Junction Diode, capacitate effects in PN Junction Diode, Quantitative theory of PN Junction Diode.

III. Special Devices:

Principles, Working of zero diode, Tunnel diode, Varactor diode, Schottky diode, SCR and UJT.

IV. Transistors:

The bipolar junction Transistor – Operation of PNP and NPN Transistors – Transistor Circuit configurations- characteristics of a CE configurations – h parameter, low frequency small signal equivalent circuit of a Transistor.

V. Transistor Biasing and thermal stabilization:

Transistor Biasing, stabilization, Different methods of transistor biasing – Fixed bias, Collector feedback bias – self bias – Bias compensation.

VI. Field Effect Transistors:

Junction Field Effect Transistors (JFET) – JFET characteristics, JFET Parameters, Small equivalent circuit – MOSFETS – Depletion and Enhancement MOSFETS.

VII. Rectifying circuits:

Half wave and full wave rectifiers – Bridge rectifiers – rectifier efficiency, Ripple and regulation – Shunt capacitor filter – Zener regulation.

VIII. Transistor Amplifiers:

CE, CB, CC amplifier configurations – Analysis using h- parameters – Multistage amplifier – RC coupled amplifier – frequency response curve and bandwidth.

Text Book:

Electronic Device and Circuits by Sanjeev Gupth.

Reference:

Integrated Electronics by Millman & Halkias.